Joanna Millunchick

Professor

joannamm@umich.edu

2640 CSE

T: (734) 647-8980

Bio

Publications

Group

Projects


Current Projects

Closed-loop experiment-simulation approach to designer materials: GaAsSbBi for optoelectronics
Sponsor: National Science Foundation

There is a strong national need for efficient optoelectronic devices that operate in the infrared and far infrared regime. Applications for infrared sources and detectors include night vision and surveillance, wireless communication, and chemical and biological sensing. Most current infrared...

Linking Extracurricular Engineering Activities and College Success Among Engineering Students
Sponsor: National Science Foundation

There is a common perception in higher education that engineering-centered co-curricular activities are beneficial in building confidence, improving academic performance, and developing social and professional networks among engineering students. While there are many published studies that link participation in various...

Growth Studies of Nitride nanostructures: compositional uniformity, defect formation, and crystal shape
Sponsor: Center for Photonic and Multiscale Nanomaterials

The Millunchick group spent the last several years examining the structural quality and compositional homogeneity of nitride nanostructures. We elucidated coalescence-induced defects development and subsequent degradation of the optical performance of LED structures. We also characterized strain-driven formation of quantum...

Morphology and Incorporation in III-V Compound Semiconductor Nanowire Growth for On-Board Optoelectronics
Sponsor: National Institute of Health

Wireless sensor networks are the backbone of the evolving system of interconnected commercialized devices known as the Internet of Things. These networks are comprised of low power sensor nodes utilized in smart appliances, environmental monitors, and implantable biomedical devices. We...

Self-reported Extracurricular Activities of M-STEM Engineering students
Sponsor: University of Michigan

The purpose of this project is to examine whether students who participate in M-STEM Academies in Engineering are participating in extracurricular activities at similar rates to students who do not participate in the program. The M-STEM Academies were established in...

Past Projects

Atomic Surface Structure in Compound Semiconductor Alloys: Mechanisms for Surface Segregation in Compound Semiconductor Thin Films

Our goal is to determine the atomistic mechanisms for surface segregation in III-V semiconductor alloy systems. Surface segregation has significant technological impact, since it affects the interfacial abruptness and compositional uniformity in device structures. However, the details of atomic processes...

Engineering of Strain Relaxation Using Ion Beam Modified Substrates

Lattice mismatch in heteroepitaxial semiconductor systems remains one of the greatest barriers to the use of otherwise promising film combinations. Many III-V semiconductor systems have bandgaps that make the desirable for high efficiency and high output optical applications, but...

Electrochemical etching of ultrasharp STM tips

In scanning tunnelling microscopy, sharper tips offer higher performance. The motivation for this project was to improve upon commercially available STM tips, which are relatively costly and have undesirable variability in sharpness. The etched tips are made from polycrystalline tungsten...

Self-Assembly of Compound Semiconductor Nanostructures: Directed Assembly of Quantum Dots using Focused Ion Beams (FIB)

Modification of materials such as InGaAs and GaAs through focused ion beams (FIB) may be useful in manufacturing nanoscale optoelectronic devices. The goal of this project is to integrate a UHV compatible FIB column arriving this November with our...

Atomic Surface Structure in Compound Semiconductor Alloys: Novel Reconstructions in InGaAs Alloys

The epitaxial growth of III-V semiconductors and their corresponding properties depend on the surface reconstructions and morphology of the film grown. We have found that the surface structure of InxGa1-xAs alloys consists of multiple surface reconstructions depending on the...

NanoFET

The nanoparticle field extraction thruster, nanoFET, is an electrostatic propulsion concept that utilizes nano-electromechanical systems (NEMS) to transport, charge, extract and accelerate nano-propellant. Of the four components in nanoFET system Ð propellant reservoir, piezoelectric vibration source, nanosieve and electrode...

Atomic Surface Structure in Compound Semiconductor Alloys: Step Edge Diffusion in Compound Semiconductors

Thin GaAs films grown on lattice-matched In0.53Ga0.47As/InP(001) have been imaged by in vacuo scanning tunneling microscopy. We observe that the morphological evolution of these strained films depends on the deposition and diffusion of group III adatoms and the incorporation...

Outreach Activities

Our group does a number of outreach activities throughout the year to interest middle and high school students in science and engineering. In the past we have been involved with the Sally Ride Festival, the WISE GISE camp, and...

Focused ion beam creation of III-V semiconductor nanostructures

Focused ion beam (FIB) irradiation and patterning of semiconductors has been demonstrated as a method for the creation of unique nanostructures. The III-V semiconductors in particular show a wide range of responses to FIB irradiation depending on material and...

Focused Ion Beams for Nanomanufacturing: Anisotropic Collodoidal Nanofludic Manufacturing

Highly lauded for its potential in biomedical applications - which usually involve particles of tens of microns or larger - microfludic device is marching towards a new scale level. Nanoparticles, unlike microparticles, are Brownian. Their packing and interaction may...

The Materials Science of Metamorphic Buffer Layers for High Performance Device Applications

I investigate the growth, stress, and morphological evolution of metamorphic buffer layers, grown on GaAs substrates by molecular beam epitaxy (MBE). The research focuses on GaAsSb and AlGaAsSb buffer layer designs. These layers seem to have higher nucleation rate...

Thermodynamic Phase Stability and Disorder of Surface Structure in Compound Semiconductor Alloys

The nanoscale surface structure of epitaxially grown III-V semiconductor alloys plays a significant role in interfacial properties and self assembly for optoelectronic devices. In order to determine the principles which give rise to various structures and how to direct their...

Self-Assembly of Compound Semiconductor Nanostructures: Nucleation and Growth of GaSb/GaAs(001) Quantum Dots

Quantum Dots (QDs) are of technological importance for numerous possible applications in optoelectronic devices. Current most QDs are made out of InAs, however GaSb could be a potential alternative for QD formation due to its similar lattice parameter. We...

The Materials Science of Metamorphic Buffer Layers for High Performance Device Applications

I investigate the growth, stress, and morphological evolution of metamorphic buffer layers, grown on GaAs substrates by molecular beam epitaxy (MBE). The research focuses on GaAsSb and AlGaAsSb buffer layer designs. These layers seem to have higher nucleation rate of...