When 3:30 PM - 4:30 PM Feb 17, 2006
Where 1504 Dow Connector
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Thin Film Dielectrics for Embedded Applications

Jon-Paul Maria - North Carolina State University

The integration of high permittivity thin film dielectric materials in high volume application has been a long sought after goal pursued by numerous researchers since the mid 1980s. Appreciation of this goal has been slower than anticipated for a variety of reasons, perhaps most importantly, the incredible complexity of ferroelectric materials under challenging physical, electrical, and mechanical boundary conditions. An additional reason for the slow rate of progression has been associated with the high cost of integration imparted by an expensive complement of electrode materials and the complicated process flows for deposition and patterning.
In this presentation we discuss recent efforts at NCSU to develop methods for preparing device quality ferroelectric thin film processes that overcome several cost and complexity issues. Our goal is to develop substrate-film-process combinations appropriate for mass production. We will focus on compositions from the (Ba,SrTi)O3 (BST) and Pb(Zr,Ti)O3 (PZT) solid solution families deposited on low cost substrates like base metal foil which are targeted towards embedded capacitor applications.
The materials challenges associated with this work are centered upon achieving process compatibility as it pertains to thermal expansion, chemical reactivity, and interface formation. In all cases, the necessary pathways to success involve a fundamental understanding of processing science. Our methods for chemical solution deposition of BT and PZT on Cu will be discussed, with specific attention to the achievement of permittivity values in excess of 2500 in film thicknesses less than 0.6 µm. Similarly we will demonstrate that low loss tunable dielectrics can be prepared on copper by sputtering, with dielectric quality factors in excess of 300 in the absence of any chemical barrier layers. Finally, we will show how these improvements are being exploited in a collaborative program between NCSU and Dupont Electronic Technologies, which is currently on track to commercialize the first mass-produced BaTiO3 thin film device.