Joanna Millunchick


2014 HH Dow

T: (734) 647-8980





Morphology and Incorporation in III-V Compound Semiconductor Nanowire Growth for On-Board Optoelectronics

Sponsor: National Institute of Health
Wireless sensor networks are the backbone of the evolving system of interconnected commercialized devices known as the Internet of Things. These networks are comprised of low power sensor nodes utilized in smart appliances, environmental monitors, and implantable biomedical devices. We are working to integrate these devices by using self-assembled nanostructures. Nanowires act as the active region of the optoelectronic device and are grown directly on the surface of the pre-packaged sensor. The nanowires can be grown on either an exposed metal pad, or subsequently deposited conducting films. To enable on-chip nanowire growth, sufficiently high quality nanowires have to be deposited directly on polycrystalline conductive layers at temperatures at or below 400oC to prevent degradation of metallic interconnects. We are particularly interested in investigating the impact of doping and growth rate on the nanowire density and morphology in order to improve structural and optoelectronic quality of these structures.