Joanna Millunchick


2014 HH Dow

T: (734) 647-8980





Modification of materials such as InGaAs and GaAs through focused ion beams (FIB) may be useful in manufacturing nanoscale optoelectronic devices. The goal of this project is to integrate a UHV compatible FIB column arriving this November with our current MBE/STM system. Upon successful integration, a combination of MBE growth, FIB patterning, and STM will be used to create and study novel optoelectronic materials. Update: The FIB column has been sucessfully integrated with the existing MBE/STM. Initial experiments where GaAs buffer layers are grown and then patterned with the FIB followed by InAs growth are going well.