Joanna Millunchick

Modification of materials such as InGaAs and GaAs through focused ion beams (FIB) may be useful in manufacturing nanoscale optoelectronic devices. The goal of this project is to integrate a UHV compatible FIB column arriving this November with our current MBE/STM system. Upon successful integration, a combination of MBE growth, FIB patterning, and STM will be used to create and study novel optoelectronic materials. Update: The FIB column has been sucessfully integrated with the existing MBE/STM. Initial experiments where GaAs buffer layers are grown and then patterned with the FIB followed by InAs growth are going well.