Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

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Adam Duzik, John C Thomas, Joanna M Millunchick, J. Lang, M. PJ Punkkinen, and P. Laukkanen (2012)

SURFACE SCIENCE, 606(15-16):1203-1207.

We determine the atomic surface structure of the Bi-terminated GaAs(001)(1 x 3) reconstruction for the first time using scanning probemicroscopies, photoemission spectroscopy, and ab initio calculations.The proposed kinked-dimer (4 x 3) model is consistent with experimentalcharacterization and can accommodate a variety of species configurationsdue to an availability of low-energy sites for Bi substitution,accounting for the significant observed local disorder. In addition,experiments show that stability of this reconstruction coincides with adramatic change in surface step morphology, giving rise to strongup/down step interaction and a counterintuitive smoothing effect on themicrometer length scale. (C) 2012 Elsevier B.V All rights reserved.

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