Misorientation defects in coalesced self-catalyzed GaN nanowires

Joanna Millunchick

Professor

joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

Bio

Publications

Group

Projects


K. A Grossklaus, A. Banerjee, S. Jahangir, P. Bhattacharya, and J. M Millunchick (2013)

JOURNAL OF CRYSTAL GROWTH, 371:142-147.

The coalescence of self-catalyzed GaN nanowires grown on Si substrateshas been examined in order to identify the cause of coalescence and tocharacterize the defect structures resulting from it. Coalescence isfound to occur due to both nanowire crystallographic misalignment andinitial nanowire proximity independent of the growth conditions. Defectsoccasionally result from coalesced nanowires, and the root cause ofdefect creation is found to be crystallographic misorientation betweenthe nanowires. Several different defect structures are identified, andthe types of defects that may form are found to depend on the degree ofthat misorientation. In the most extreme cases ``zipper''-like arraysof dislocations and stacking faults were observed. (C) 2013 ElsevierB.V. All rights reserved.

Document Actions