Focused ion beam creation and templating of InAs and InAs/InP nanospikes

Joanna Millunchick

Professor

joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

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K. A Grossklaus and J. M Millunchick (2011)

NANOTECHNOLOGY, 22(35).

Ion beam irradiation has been examined as a method for creatingnanoscale semiconductor pillar and cone structures, but has the drawbackof inaccurate nanostructure placement. We report on a method forcreating and templating nanoscale InAs spikes by focused ion beam (FIB)irradiation of both homoepitaxial InAs films and heteroepitaxial InAs onInP substrates. These `nospikes' are created as In droplets, formed dueto FIB irradiation, act as etch masks for the underlying InAs. Bypre-patterning the InAs to influence In droplet movement, nanospike

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