Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

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Jinyoung Hwang, Andrew J Martin, Joanna M Millunchick, and Jamie D Phillips (2012)

JOURNAL OF APPLIED PHYSICS, 111(7).

The electronic structure and thermal carrier capture and escapemechanisms are studied for GaSb/GaAs quantum dots with a type-II bandalignment using admittance spectroscopy. Clear signatures are observedcorresponding to confined quantum dot states with extracted activationenergy of 0.337 eV and the thermal capture cross section in the rangefrom 2.10 x 10(-16) to 1.19 x 10(-13) cm(2). The thermal emission ratesin the GaSb/GaAs quantum dots are significantly lower than prior reportsfor type-I systems, where optical emission is predicted to be thedominant process in an intermediate band solar cells under solarconcentration. (C) 2012 American Institute of Physics. [http://dx.

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