Analyzing pattern retention for multilayer focused ion beam induced quantum dot structures

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

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Marta Luengo-Kovac, Timothy W Saucer, Andrew J Martin, Joanna Millunchick, and Vanessa Sih (2013)

JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B, 31(3).

Atomic force microscopy was used to investigate the effects oftemplating parameters on focused ion beam patterned single-, two-, andthree-layer InAs/GaAs(001) quantum dot structures. The number of layers,focused ion beam dwell time, and pattern spacing affected the fidelityof the quantum dots. The highest single dot fidelities were found inregions with 1 and 3ms dwell times and 1 and 2 mu m pattern spacings. Atwo-layer region patterned with 1ms dwell time and 1 mu m spacing wasfound to have 100\\% single quantum dot fidelity with no off-site dotnucleation in a 20 x 20 mu m(2) scan. Holes that were milled with 6 and9ms dwell times and 0.25 mu m spacing became faceted, that is, deep,tightly packed, and rhombic, by the third layer. Autocorrelation of theimages was used to analyze the periodicity and size of the features. (C)2013 American Vacuum Society.

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