Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 x 8) surface

Joanna Millunchick

Professor

joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

Bio

Publications

Group

Projects


Andrew J Martin, Timothy W Saucer, Kai Sun, Sung J Kim, Guang Ran, Garrett V Rodriguez, Xiaoqing Pan, Vanessa Sih, and Joanna Millunchick (2012)

JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B, 30(2).

Multilayer and single layer GaSb/GaAs(001) quantum dot structures weregrown on an Sb-terminated (2 x 8) surface reconstruction and compared tothose grown on an As-terminated (2 x 4) surface reconstruction. Uncappedquantum dots grown on the (2 x 8) surface were approximately 25\\%smaller in diameter and had a larger width/height aspect ratio. Quantumdots grown on both surfaces were defect free at the quantum dot/spacerlayer interface. The dots did not appear to be fully compact when imagedby transmission electron microscopy, which may be due to dissolutionand/or quantum ring formation. The quantum dot photoluminescence peakfor dots grown on the (2 x 8) surface was brighter but at the sameenergy as that of dots grown on the (2 x 4) surface. This was likely theresult of a higher areal density of dots on the (2 x 8) surface and alower tendency for them to intermix during capping, resulting in dots ofsimilar size for both samples after capping. Quantum dots grown on the(2 x 8) surface also displayed greater morphological stability whenquenched in the absence of Sb. (C) 2012 American Vacuum Society.[DOI:10.1116/1.3675455]

Document Actions