Incorporation kinetics in mixed anion compound semiconductor alloys

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

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Joanna M Millunchick, Evan M Anderson, Chris Pearson, Wendy L Sarney, and Stefan P Svensson (2013)

JOURNAL OF APPLIED PHYSICS, 114(23).

We present a kinetic model predicting anion incorporation in InAsSb.Included are the effects of As desorption, Sb segregation, and Sbdisplacement by As, any of which may be limited by the In flux if it iscomparatively larger. The model captures experimental data over a rangeof growth conditions for the InAsSb system using activation energies fordesorption and Sb segregation found in literature. The activation energyfor Sb displacement found in this work is 1.3 eV. This model is generaland should be valid for other mixed anion systems, or, appropriatelymodified, mixed cation systems and mixed anion/cation systems such asAlInAsSb. (C) 2013 AIP Publishing LLC.

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