Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

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T. W Saucer, J-E. Lee, A. J Martin, D. Tien, J. M Millunchick, and V. Sih (2011)

SOLID STATE COMMUNICATIONS, 151(4):269-271.

We report on photoluminescence measurements of vertically stackedInAs/GaAs quantum dots grown by molecular beam epitaxy on focused ionbeam patterned hole arrays with varying array spacing. Quantum dotemission at 1.24 eV was observed only on patterned regions,demonstrating preferential nucleation of optically active dots atdesired locations and below the critical thickness for dot formation atthese growth conditions. Photoluminescence measurements as a function ofvarying focused ion beam irradiated hole spacing showed that the quantumdot emission intensity increased with decreasing array periodicity,consistent with increasing dot density. (C) 2010 Elsevier Ltd. Allrights reserved.

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