Inverse Stranski-Krastanov growth in InGaAs/InP

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

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L. Sears, A. Riposan, and J. M Millunchick (2010)

JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY A, 28(5):1175-1180.

Thin films of In(x)Ga(1-x)As are observed to develop either islands orpits on the surface to relieve lattice mismatch strain after somecritical thickness depending on the composition of the film. Thecomposition is thought to alter either the surface energy or theequilibrium adatom concentration of the growing film, thus changingwhich strain relieving features, islands, or pits nucleate on thesurface first. Once pits form, their behavior is similar to that ofislanding, resulting in an ``inverse'' Stranski-Krastanov growth mode.Furthermore, the atomic surface structure near the pits is differentthan away from the pits and is correlated with island formation. (C)2010 American Vacuum Society. [DOI: 10.1116/1.3474982]

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