Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

Joanna Millunchick

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joannamm@umich.edu

2014 HH Dow

T: (734) 647-8980

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E. S Zech, A. S Chang, A. J Martin, J. C Canniff, Y. H Lin, J. M Millunchick, and R. S Goldman (2013)

APPLIED PHYSICS LETTERS, 103(8).

We have investigated the influence of GaAs surface termination on thenanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs)grown by molecular-beam epitaxy. Transmission electron microscopyreveals both coherent and semi-coherent clusters, as well as misfitdislocations, independent of surface termination. Cross-sectionalscanning tunneling microscopy and spectroscopy reveal clustered GaSb QDswith type I band offsets at the GaSb/GaAs interfaces. We discuss therelative influences of strain and QD clustering on the band offsets atGaSb/GaAs interfaces. (C) 2013 AIP Publishing LLC.

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