Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

Emmanouil (Manos) Kioupakis

Associate Professor

kioup@umich.edu

2106 HH Dow

T: (734) 764-3321

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Emmanouil Kioupakis, Qimin Yan, Daniel Steiauf, and Chris G Van de Walle (2013)

New Journal of Physics, 15:125006.

Nitride light-emitting diodes are a promising solution for efficientsolid-state lighting, but their performance at high power is affected bythe efficiency-droop problem. Previous experimental and theoretical workhas identified Auger recombination, a three-particle nonradiativecarrier recombination mechanism, as the likely cause of the droop. Inthis work, we use first-principles calculations to elucidate thedependence of the radiative and Auger recombination rates ontemperature, carrier density and quantum-well confinement. Ourcalculated data for the temperature dependence of the recombinationcoefficients are in good agreement with experiment and provide furthervalidation on the role of Auger recombination in the efficiencyreduction. Polarization fields and phase-space filling negatively impactdevice efficiency because they increase the operating carrier density ata given current density and increase the fraction of carriers lost toAuger recombination.

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