MOCVD-Grown InGaN Nanowires for Photovoltaic Applications

Max Shtein

Professor

mshtein@umich.edu

3051W NCRC, Building 28

T: (734) 764-4312

Bio

Publications

Group


HC Kuo, TS Oh, GH Jung, M Hendrix, SJ Kim, M Shtein, X Pan, and PC Ku (2014)

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC):1064–1067.

Dislocation-free, vertically-aligned, and strain-relaxed InGaN nanowires were realized using metal-organic chemical vapor deposition. The indium composition is continuously tunable from 3.4 to 2.5 eV, with the latter being significant for a four-junction photovoltaic device. Growth mechanism, morphological evolution, and optical as well as structural properties were analyzed. Photovoltaic response was also shown.

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