Rachel S. Goldman

Maria Goeppert Mayer Collegiate Professor


2094 H.H. Dow
T: (734) 647-6821




Research Facilities


Synthesis of Low-Dimensional Semiconductor Structures: Ion-Cut-Synthesis

Collaborators: Michael Thouless, ME
Ion implantation plus thermal annealing often leads to the formation and coalescence of gas bubbles which may be used as the basis for integrating heterogeneous materials by means of transferring thin layers of one material onto another. For example, when an ion-implanted substrate is bonded to another substrate and subsequently thermally annealed, bubble formation and coalescence often lead to fracture of the original substrate just below the interface. To date, the sole role of implanted ions has been to induce the formation and coalescence of gas bubbles. We recently reported the formation and blistering of a layer of luminescent GaN-rich nanostructures, using N ion implantation into GaAs, followed by high temperature rapid thermal annealing. We are adapting this concept to achieve simultaneous nanostructure synthesis and layer transfer, a process termed "ion-cut-synthesis". For this purpose, we are exploring methods for glass-mediated bonding of GaAs to low-cost ceramic and glass substrates. We are endeavoring to optimize bonding parameters to maximize the interface toughness and maximize the efficiency of layer transfer. Our goal is to achieve large-scale integration of nanostructure layers with low-cost substrates. Ion-cut synthesis is expected to enable the development of low-cost manufacturing methods, especially those involving integration of critical technologies including optoelectronics , nanoelectronics, and Si-based circuitry.
Highlights (Click an image for more information)
  • Wafer Bonding and Ion Cut Synthesis

    This schematic shows the formation and integration of a GaAsN nanostructure layer with a new substrate: (a) N ion implanted epi-GaAs is bonded to a new substrate; (b) following thermal annealing, the GaAsN nanostructure layer forms and splits from the GaAs substrate, and layer transfer is accomplished.  The simultaneous formation and blistering of GaAsN nanostructures may provide an opportunity for integration of these nanostructures with a variety of substrates.