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Zhuoqun Wen
RESEARCH INTERESTS:
Molecular Beam Epitaxy growth of Ga2O3;
HEMTs, FETs devices of Ga2O3;
Materials properties of Ga2O3.
RESEARCH INTERESTS:
Molecular Beam Epitaxy growth of Ga2O3;
HEMTs, FETs devices of Ga2O3;
Materials properties of Ga2O3.