When 10:30 AM - 11:30 AM Nov 20, 2020
Where Virtual
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“Epitaxial integration of dissimilar semiconductors for infrared optoelectronics”

Kunal Mukherjee
Assistant Professor, Department of Materials Science & Engineering, Stanford

Synthesizing dissimilar semiconductors on a single crystal platform can power the next generation of electronics and photonics applications. Compound semiconductors can leverage the scale and functionality of silicon technology, while bringing new properties to the table. Epitaxial growth and integration of these compound semiconductors to such a platform, however, is quite the materials science challenge—these very differences in properties lead to unusual interfaces and crystal defects such as dislocations that severely impact their performance. I will discuss how we continue to understand why dislocations are bad in light emitting devices using new microscopy and microanalysis tools, and talk about our progress in engineering defect tolerance in near-infrared telecom lasers on silicon using InAs quantum dots. I will also present recent results from epitaxially integrating mid-infrared PbSnSe light emitters with application in sensors that appear to be naturally defect tolerant.  

 Bio: Kunal Mukherjee is an assistant professor in MSE at Stanford. He has been an assistant professor in the Materials department at UC Santa Barbara (2016-2020), held postdoctoral appointments at IBM TJ Watson Research Center (2016) and MIT (2015), and worked as a transceiver engineer at Finisar (2009-2010).

The Mukherjee group specializes in semiconductors that emit and detect light in the infrared. His research enables better materials for data transmission, sensing, manufacturing, and environmental monitoring. They make high-quality thin films with IV-VI (PbSnSe) and III-V (GaAs-InAs/GaSb) material systems and spend much time understanding how imperfections in the crystalline structure such as dislocations and point defects impact their electronic and optical properties. This holds the key to directly integrating these semiconductors with silicon and germanium substrates for new hybrid circuits that combine infrared photonics and conventional electronics.