When 10:15 AM - 11:30 AM Feb 24, 2023
Where 1013 H.H. Dow
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Mapping Semiconductor Nanowire Junction Potentials

Karen Kavanagh
Simon Fraser University


The diffusion and drift of carriers at semiconductor junctions leads to the establishment of built-in potential barriers and space-charge regions that exist at zero applied bias. Their dimensions and magnitude are a measure of the net carrier concentrations. In semiconductor nanostructures, surface effects and catalyst processes may control these parameters, and it is often difficult to carry out bias-dependent measurements. This talk will discuss two lesser known methods for imaging or measuring contact potentials applied to nanoscale devices, electron holography (EH) and electron-beam induced current (EBIC) showing examples from Si, InP, and GaAs axial and core-shell nanowires.