Alex Perez-Bergquist, 1st Place - Digitally Enhanced or Colorized Images of Microstructures

A single crystal Ge wafer was irradiated with high energy ions, producing a porous Ge surface layer. Afterwards, the sample was thermally annealed in inert gas above the recrystallization temperature. This caused the ion-amorphized Ge surface layer to recrystallize, forcing the originally formless voids to reform and adhere to the FCC crystal structure of Ge. This image illustrates the final product of a number of scientific processes, including: ion irradiation-induced amorphization, ion irradiation-induced void formation, thermal recrystallization, and void lattice formation. The image was taken using EMAL’s FEI NOVA SEM/FIB system operating in immersion mode (high-resolution mode). The electron beam was positioned perpendicular to the sample surface. Voids (initially black) were colorized according to their size (green, red, and blue corresponding to large voids or void clusters, medium voids, and small voids, respectively), and the Ge substrate (initially white/grey) was colored yellow.
Alex Perez-Bergquist, 1st Place - Digitally Enhanced or Colorized Images of Microstructures
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