MSE News
Diran Apelian featured as second Robert D. Pehlke Lecturer
Using Bob Pehlke as an example, Apelian emphasized the importance of building relationships.Yalisove wins award for outstanding contributions to materials education
The award was presented in August at the 10th annual North American Materials Education Symposium (NAMES) held at Stanford.The "Magic Ratio" that could power tomorrow's solar cells
Q&A: Rachel Goldman reveals how her team's work with bismuth-nitrogen alloys could accelerate the development of concentrator photovoltaics, and could also lead to advances in semiconductor lasers and quantum computing.2019 Robert D. Pehlke Lectureship to feature Diran Apelian
The 2nd annual Robert D. Pehlke Lectureship in Materials Processing will be held Friday, Sept. 13.grad SWE, led by MSE students, receives global recognition
The U-M chapter, co-directed by Erin Evke and Kathleen Chou, was recently recognized for its long-standing commitment to empowering female engineers.U-M launches Michigan Materials Research Institute
Alan Taub, MMRI founding director and MSE professor, says center will unite disciplines, spur new collaborations with government and industryImmortal switches, quantum computers could stem from new semiconductor
Material's polarity, conductivity change with temperatureMSE alum Rita Baranwal new Assistant Secretary of Nuclear Energy
Baranwal (MSE '96, PHD '98) was recently confirmed by the U.S. SenateCancer is smarter than you think: Q&A with Geeta Mehta
CoE senior writer Gabe Cherry recently sat down with Assistant Professor Geeta Mehta to talk about how decoding the sophisticated inner workings of cancer may help us fight it.Taub named SME Fellow
The prestigious award honors those with 20+ years of outstanding contributions to the manufacturing profession.Poudeu group's findings could shed light on new ways to create high-Tc ferromagnetism in semiconductors
MSE is pleased to announce that Associate Professor P. Ferdinand P. Poudeu group’s manuscript, "Engineering Magnetic Transitions in Fe1−xSnxBi2Se4 n‑Type Ferromagnetic Semiconductors through Chemical Manipulation...