Materials Science & Engineering

Publications

Rachel S. Goldman

Maria Goeppert Mayer Collegiate Professor

rsgold@umich.edu

2094 H.H. Dow
T: (734) 647-6821

Bio

Publications

Projects

Research Facilities

Group


  1. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. 16 Sep 2024 Applied Physics Letters125(12):122108. Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS

  2. Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires. 22 Jul 2024Applied Physics Letters125(4). Liu A, Xi Z, Li M, Yang JC, Qi L, Goldman RS

  3. Onset of tetrahedral interstitial formation in GaAsN alloys. 15 Apr 2024 Applied Physics Letters124(16). Cooper JJP, Jen T, Novak A, Xi Z, Qi L, Naab FU, Wang YQ, Goldman RS

  4. Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys. 8 Apr 2024. Applied Physics Letters124(15). Mitchell JW, Greenhill CM, Huang TY, Jen T, Yang YC, Hammond K, Heyman JN, Goldman RS

  5.  Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN. 1 Apr 2024 AIP Advances14(4). Titze M, Katzenmeyer A, Frisone S, Ohlhausen JA, Flores A, Campbell DA, Li B, Wang Y, Han J, Bielejec ES, Goldman RS

  6.  Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing. 1 Mar 2024 Optical Materials149. Pavelescu EM, Ticoş D, Ligor O, Romaniţan C, Matei A, Comănescu F, Ţucureanu V, Spânulescu SI, Ticoş C, Ohshima T, Nakamura T, Imaizumi M, Goldman RS, Wakahara A, Yamane K

  7.  Homologous Self‐Assembled Superlattices: What Causes their Periodic Polarity Switching? Feb 2024. Advanced Physics Research3(2). Wiley. Thakur V, Benafsha D, Turkulets Y, Azulay AR, Liang X, Goldman RS, Shalish I

  8.  Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy. 21 Nov 2023Journal of Applied Physics134(19). Dey T, Arbogast AW, Meng Q, Reza MS, Muhowski AJ, Cooper JJP, Ozdemir E, Naab FU, Borrely T, Anderson J, Goldman RS, Wasserman D, Bank SR, Holtz MW, Piner EL, Wistey MA

  9.  Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces. 6 Nov 2023 Applied Physics Letters123(19). Huang TY, Occena J, Greenhill C, Borrely T, Yang YC, Hu J, Chen A, Zinn C, Jenkins K, Li L, Kurdak C, Goldman RS 

  10. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. 1 Jun 2023 Solar Energy Materials and Solar Cells 254. Borrely T, Alzeidan A, de Lima MD, Jacobsen GM, Huang TY, Yang YC, Cantalice TF, Goldman RS, Teodoro MD, Quivy AA

  11. Why Room Temperature GeSn Lasers Need Carbon. 1 Jan 2023 IEEE International Conference on Group IV Photonics GFP 2023-April. Dey T, Arbogast AW, Meng Q, Reza S, Muhowski A, Cooper J, Goldman RS, Borrely T, Bank SR, Wistey MA

  12. Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices. 1 Nov 2022 Nano Energy 102. Chang AS, Li B, Wang S, Frisone S, Goldman RS, Han J, Lauhon LJ

  13. Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment. 28 Feb 2022 Journal of Applied Physics131(8). McGuigan BC, Chang AS, Greenhill C, Johnson HT, Goldman RS

  14. Writing-to-learn in introductory materials science and engineering. 1 Feb 2022 MRS Communications12(1). Marks L, Lu H, Chambers T, Finkenstaedt-Quinn S, Goldman RS

  15. Low-damage, in-situ chemical etching of GaN by tertiarybutyl-chloride (TBCl). 1 Jan 2022 2022 Compound Semiconductor Week, CSW 2022. Li B, Wang S, Frisone S, He J, Cheng G, Zhang Z, Goldman R, Han J

  16. On the importance of atom probe tomography for the development of new nanoscale devices. 1 Jan 2022 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings. Borrely T, Huang TY, Yang YC, Goldman RS, Quivy AA

  17. Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy. 19 Jul 2021 Applied Physics Letters119(3). Lu H, Moniri S, Reese C, Jeon S, Katcher A, Hill T, Deng H, Goldman RS

  18. Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy? 1 Dec 2020 Scientific Reports10(1). Azulay AR, Turkulets Y, Gaudio DD, Goldman RS, Shalish I

  19. Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys. 5 Oct 2020 Applied Physics Letters117(14). Pavelescu EM, Ligor O, Occena J, Ticoş C, Matei A, Gavril RL, Yamane K, Wakahara A, Goldman RS

  20. Temperature-dependent study of GaAs1-x-yNxBiy alloys for band-gap engineering: Photoreflectance and k • p modeling. 1 Sep 2020 Applied Physics Express13(9). Zuraw W, Linhart WM, Occena J, Jen T, Mitchell JW, Goldman RS, Kudrawiec R

  21. Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers. 22 Jun 2020 Applied Physics Letters116(25). Greenhill C, Chang AS, Zech ES, Clark S, Balakrishnan G, Goldman RS

  22. Mechanisms of GaN quantum dot formation during nitridation of Ga droplets. 10 Feb 2020 Applied Physics Letters116(6). Lu H, Reese C, Jeon S, Sundar A, Fan Y, Rizzi E, Zhuo Y, Qi L, Goldman RS

  23. Ion irradiation of III-V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals. 1 Dec 2019 Applied Physics Reviews6(4). Kang M, Goldman RS

  24. Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion. 14 Nov 2019 Journal of Applied Physics126(18). Del Gaudio D, Boone CT, Sallans K, Mason E, Williamson AJ, Yarlagadda S, Turkulets Y, Heron JT, Shalish I, Goldman RS

  25. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys. 19 Aug 2019 Applied Physics Letters115(8). Occena J, Jen T, Mitchell JW, Linhart WM, Pavelescu EM, Kudrawiec R, Wang YQ, Goldman RS

  26. Asymmetric 3D Elastic–Plastic Strain-Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking. 10 May 2019 Advanced Materials31(19). Motlag M, Kumar P, Hu KY, Jin S, Li J, Shao J, Yi X, Lin YH, Walrath JC, Tong L, Huang X, Goldman RS, Ye L, Cheng GJ

  27. Chang, AS, Walrath, JC, Frost, T, Greenhill, C, Occena, J, Hazari, A, Bhattacharya, P, and Goldman, RS (2019).Formation and properties of InGaN QDs: Influence of substrates,  APPLIED PHYSICS LETTERS, 114(6).

  28. Motlag, M, Kumar, P, Hu, KY, Jin, S, Li, J, Shao, J, Yi, X, Lin, Y, Walrath, C., J, Tong, L, Huang, X, Goldman, RS, Ye, Lei, and Cheng, GJ (2019). Asymmetric 3D Elastic-Plastic Strain-Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking,  ADVANCED MATERIALS, 31(19).

  29. Occena, J, Jen, T, Mitchell, JW, Linhart, WM, Pavelescu, E, Kudrawiec, R, Wang, YQ, and Goldman, RS (2019).Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys,  APPLIED PHYSICS LETTERS, 115(8).

  30. Del Gaudio, D, Aagesen, LK, Huang, S, Johnson, TM, Faeth, BD, Lu, H, Ziff, RM, and Goldman, RS (2018).Influence of surface nano-patterning on the placement of InAs quantum dots,  JOURNAL OF APPLIED PHYSICS, 124(11).

  31. Iafrate, JR, Huang, S, Del Gaudio, D, Goldman, S., R, and Sih, V (2018). Effect of modified periodic waveforms on current-induced spin polarization measurements,  AIP ADVANCES, 8(6).

  32. Occena, J, Jen, T, Lu, H, Carter, BA, Jimson, TS, Norman, AG, and Goldman, RS (2018). Surfactant-induced chemical ordering of GaAsN: Bi,  APPLIED PHYSICS LETTERS, 113(21).

  33. Finkenstaedt-Quinn, SA, Halim, AS, Chambers, G., T, Moon, A, Goldman, RS, Gere, AR, and Shultz, GV (2017).Investigation of the Influence of a Writing-to-Learn Assignment on Student Understanding of Polymer Properties,  JOURNAL OF CHEMICAL EDUCATION, 94(11, SI):1610–1617.

  34. Kang, M, Jeon, S, Jen, T, Lee, J, Sih, V, and Goldman, R (2017). Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence,  JOURNAL OF APPLIED PHYSICS, 122(3):033102.

  35. Occena, J, Jen, T, Rizzi, E, Johnson, T, Horwath, J, Wang, Y, and Goldman, R (2017). Bi-enhanced N incorporation in GaAsNBi alloys,  APPLIED PHYSICS LETTERS, 110(24):242102.

  36. Field, R, Occena, J, Jen, T, Del Gaudio, D, Yarlagadda, B, Kurdak, C, and Goldman, R (2016). Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys,  APPLIED PHYSICS LETTERS, 109(25):252105.

  37. Liu, W, Chi, H, Walrath, J, Chang, A, Stoica, V, Endicott, L, Tang, X, Goldman, R, and Uher, C (2016). Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films,  APPLIED PHYSICS LETTERS, 108(4):043902.

  38. Mintairov, A, He, Y, Merz, J, Jin, Y, Goldman, R, Kudrawiec, R, Misiewicz, J, Akimov, I, Yakovlev, D, and Bayer, M (2016). Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys,  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(9):095012.

  39. Canniff, J, Jeon, S, Huang, S, and Goldman, R (2015). Formation and coarsening of near-surface Ga nanoparticles on SiNx,  APPLIED PHYSICS LETTERS, 106(24):243102.

  40. Jen, T, Vardar, G, Wang, Y, and Goldman, R (2015). Identifying the dominant interstitial complex in dilute GaAsN alloys,  APPLIED PHYSICS LETTERS, 107(22):221904.

  41. Luengo-Kovac, M, Macmahon, M, Huang, S, Goldman, R, and Sih, V (2015). g-factor modification in a bulk InGaAs epilayer by an in-plane electric field,  PHYSICAL REVIEW B, 91(20):201110.

  42. Walrath, J, Lin, Y, Huang, S, and Goldman, R (2015). Profiling the local carrier concentration across a semiconductor quantum dot,  APPLIED PHYSICS LETTERS, 106(19):192101.

  43. Warren, M, Canniff, J, Chi, H, Naab, F, Stoica, V, Clarke, R, Uher, C, and Goldman, R (2015). Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs,  JOURNAL OF APPLIED PHYSICS, 117(6):065101.

  44. Abere, M, Chen, C, Rittman, D, Kang, M, Goldman, R, Phillips, J, Torralva, B, and Yalisove, S (2014). Nanodot formation induced by femtosecond laser irradiation,  APPLIED PHYSICS LETTERS, 105(16):163103.

  45. Chang, A, Zech, E, Kim, T, Lin, Y, Mawst, L, and Goldman, R (2014). Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment,  APPLIED PHYSICS LETTERS, 105(14):142105.

  46. Fahrenkrug, E, Gu, J, Jeon, S, Veneman, P, Goldman, R, and Maldonado, S (2014). Room-Temperature Epitaxial Electrodeposition of Single-Crystalline Germanium Nanowires at the Wafer Scale from an Aqueous Solution,  NANO LETTERS, 14(2):847–852.

  47. Huang, S, Kim, S, Pan, X, and Goldman, R (2014). Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 105(3):032107.

  48. Kang, M, Beskin, I, Al-Heji, A, Shende, O, Huang, S, Jeon, S, and Goldman, R (2014). Evolution of ion-induced nanoparticle arrays on GaAs surfaces,  APPLIED PHYSICS LETTERS, 104(18):182102.

  49. Kang, M, Wu, J, Ye, W, Jiang, Y, Robb, E, Chen, C, and Goldman, R (2014). Formation and evolution of ripples on ion-irradiated semiconductor surfaces,  APPLIED PHYSICS LETTERS, 104(5):052103.

  50. Kudrawiec, R, Sitarek, P, Gladysiewicz, M, Misiewicz, J, He, Y, Jin, Y, Vardar, G, Mintarov, A, Merz, J, Goldman, R, Yu, K, and Walukiewicz, W (2014). Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers,  THIN SOLID FILMS, 567:101–104.

  51. Li, Y, Stoica, V, Sun, K, Liu, W, Endicott, L, Walrath, J, Chang, A, Lin, Y, Pipe, K, Goldman, R, Uher, C, and Clarke, R (2014). Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers,  APPLIED PHYSICS LETTERS, 105(20):201904.

  52. Canniff, J, Wood, A, and Goldman, R (2013). Formation mechanisms of embedded nanocrystals in SiNx, APPLIED PHYSICS LETTERS, 102(24):243111.

  53. Feldberg, N, Aldous, J, Linhart, W, Phillips, L, Durose, K, Stampe, P, Kennedy, R, Scanlon, D, Vardar, G, Field, R, Jen, T, Goldman, R, Veal, T, and Durbin, S (2013). Growth, disorder, and physical properties of ZnSnN2, APPLIED PHYSICS LETTERS, 103(4):042109.

  54. Field, R, Jin, Y, Cheng, H, Dannecker, T, Jock, R, Wang, Y, Kurdak, C, and Goldman, R (2013). Influence of N incorporation on persistent photoconductivity in GaAsN alloys,  PHYSICAL REVIEW B, 87(15):155303.

  55. Huang, S, Kim, S, Levy, R, Pan, X, and Goldman, R (2013). Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands,  APPLIED PHYSICS LETTERS, 103(13):132104.

  56. Kang, M, Al-Heji, A, Lee, J, Saucer, T, Jeon, S, Wu, J, Zhao, L, Katzenstein, A, Sofferman, D, Sih, V, and Goldman, R (2013). Ga nanoparticle-enhanced photoluminescence of GaAs,  APPLIED PHYSICS LETTERS, 103(10):101903.

  57. Kang, M, Wu, J, Sofferman, D, Beskin, I, Chen, H, Thornton, K, and Goldman, R (2013). Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces,  APPLIED PHYSICS LETTERS, 103(7):072115.

  58. Pursley, B, Luengo-Kovac, M, Vardar, G, Goldman, R, and Sih, V (2013). Spin lifetime measurements in GaAsBi thin films,  APPLIED PHYSICS LETTERS, 102(2):022420.

  59. Vardar, G, Paleg, S, Warren, M, Kang, M, Jeon, S, and Goldman, R (2013). Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi,  APPLIED PHYSICS LETTERS, 102(4):042106.

  60. Walrath, J, Lin, Y, Pipe, K, and Goldman, R (2013). Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy,  APPLIED PHYSICS LETTERS, 103(21):212101.

  61. Warren, M, Canniff, J, Chi, H, Morag, E, Naab, F, Stoica, V, Clarke, R, Uher, C, and Goldman, R (2013). Influence of embedded indium nanocrystals on GaAs thermoelectric properties,  JOURNAL OF APPLIED PHYSICS, 114(4):043704.

  62. Zech, E, Chang, A, Martin, A, Canniff, J, Lin, Y, Millunchick, J, and Goldman, R (2013). Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets,  APPLIED PHYSICS LETTERS, 103(8):082107.

  63. Dasika, V and Goldman, R (2012). STM OF SELF ASSEMBLED III-V NANOSTRUCTURES,  HANDBOOK OF INSTRUMENTATION AND TECHNIQUES FOR SEMICONDUCTOR NANOSTRUCTURE CHARACTERIZATION, VOLS 1 AND 2, 1-2:369–406.

  64. Kang, M, Saucer, T, Warren, M, Wu, J, Sun, H, Sih, V, and Goldman, R (2012). Surface plasmon resonances of Ga nanoparticle arrays,  APPLIED PHYSICS LETTERS, 101(8):081905.

  65. Kang, M, Wu, J, Huang, S, Warren, M, Jiang, Y, Robb, E, and Goldman, R (2012). Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces,  APPLIED PHYSICS LETTERS, 101(8):082101.

  66. Warren, M, Wood, A, Canniff, J, Naab, F, Uher, C, and Goldman, R (2012). Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs,  APPLIED PHYSICS LETTERS, 100(10):102101.

  67. Wood, A, Collino, R, Wang, P, Wang, Y, and Goldman, R (2012). Formation and transformation of embedded GaN nanocrystals,  APPLIED PHYSICS LETTERS, 100(20):203113.

  68. Wu, J and Goldman, R (2012). Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition,  APPLIED PHYSICS LETTERS, 100(5):053103.

  69. Collino, R, Wood, A, Estrada, N, Dick, B, Ro, H, Soles, C, Wang, Y, Thouless, M, and Goldman, R (2011).Formation and transfer of GaAsN nanostructure layers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(6):060601.

  70. Dasika, V, Semichaevsky, A, Petropoulos, J, Dibbern, J, Dangelewicz, A, Holub, M, Bhattacharya, P, Zide, J, Johnson, H, and Goldman, R (2011). Influence of Mn dopants on InAs/GaAs quantum dot electronic states, APPLIED PHYSICS LETTERS, 98(14):141907.

  71. Huang, S, Semichaevsky, A, Webster, L, Johnson, H, and Goldman, R (2011). Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices,  JOURNAL OF APPLIED PHYSICS, 110(7):073105.

  72. Kumah, D, Wu, J, Husseini, N, Dasika, V, Goldman, R, Yacoby, Y, and Clarke, R (2011). Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs,  APPLIED PHYSICS LETTERS, 98(2):021903.

  73. Semichaevsky, A, Goldman, R, and Johnson, H (2011). Linking Computational and Experimental Studies of III-V Quantum Dots for Optoelectronics and Photovoltaics,  JOM, 63(9):20–26.

  74. Wood, A, Collino, R, Cardozo, B, Naab, F, Wang, Y, and Goldman, R (2011). Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals,  JOURNAL OF APPLIED PHYSICS, 110(12):124307.

  75. Wood, A, Weng, X, Wang, Y, and Goldman, R (2011). Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals,  APPLIED PHYSICS LETTERS, 99(9):093108.

  76. Dannecker, T, Jin, Y, Cheng, H, Gorman, C, Buckeridge, J, Uher, C, Fahy, S, Kurdak, C, and Goldman, R (2010).Nitrogen composition dependence of electron effective mass in GaAs1-xNx,  PHYSICAL REVIEW B, 82(12):125203.

  77. Collino, R, Dick, B, Naab, F, Wang, Y, Thouless, M, and Goldman, R (2009). Blister formation in ion-implanted GaAs: Role of diffusivity,  APPLIED PHYSICS LETTERS, 95(11):111912.

  78. Dasika, V, Goldman, R, Song, J, Choi, W, Cho, N, and Lee, J (2009). Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots,  JOURNAL OF APPLIED PHYSICS, 106(1):014315.

  79. Dasika, V, Song, J, Choi, W, Cho, N, Lee, J, and Goldman, R (2009). Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation,  APPLIED PHYSICS LETTERS, 95(16):163114.

  80. Jin, Y, He, Y, Cheng, H, Jock, R, Dannecker, T, Reason, M, Mintairov, A, Kurdak, C, Merz, J, and Goldman, R (2009).Influence of Si-N complexes on the electronic properties of GaAsN alloys,  APPLIED PHYSICS LETTERS, 95(9):092109.

  81. Jin, Y, Jock, R, Cheng, H, He, Y, Mintarov, A, Wang, Y, Kurdak, C, Merz, J, and Goldman, R (2009). Influence of N interstitials on the electronic properties of GaAsN alloys,  APPLIED PHYSICS LETTERS, 95(6):062109.

  82. Wu, J, Ye, W, Cardozo, B, Saltzman, D, Sun, K, Sun, H, Mansfield, J, and Goldman, R (2009). Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces,  APPLIED PHYSICS LETTERS, 95(15):153107.

  83. Yadav, A, Pipe, K, Ye, W, and Goldman, R (2009). Thermoelectric properties of quantum dot chains, JOURNAL OF APPLIED PHYSICS, 105(9):093711.

  84. Reason, M, Jin, Y, Mckay, H, Mangan, N, Mao, D, Goldman, R, Bai, X, and Kurdak, C (2008). Influence of N on the electronic properties of GaAsN alloy films and heterostructures (vol 102, art no 103710, 2007),  JOURNAL OF APPLIED PHYSICS, 103(1):019902.

  85. Sheu, Y, Lee, S, Wahlstrand, J, Walko, D, Landahl, E, Arms, D, Reason, M, Goldman, R, and Reis, D (2008).Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction, PHYSICAL REVIEW B, 78(4):045317.

  86. Trigo, M, Sheu, Y, Arms, D, Chen, J, Ghimire, S, Goldman, R, Landahl, E, Merlin, R, Peterson, E, Reason, M, and Reis, D (2008). Probing unfolded acoustic phonons with X rays,  PHYSICAL REVIEW LETTERS, 101(2):025505.

  87. Reason, M, Jin, Y, Mckay, H, Mangan, N, Mao, D, Goldman, R, Bai, X, and Kurdak, C (2007). Influence of N on the electronic properties of GaAsN alloy films and heterostructures,  JOURNAL OF APPLIED PHYSICS, 102(10):103710.

  88. Reason, M, Rudawski, N, McKay, H, Weng, X, Ye, W, and Goldman, R (2007). Mechanisms of GaAsN growth: Surface and step-edge diffusion,  JOURNAL OF APPLIED PHYSICS, 101(8):083520.

  89. Tabbal, M, Kim, T, Warrender, J, Aziz, M, Cardozo, B, and Goldman, R (2007). Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 25(6):1847–1852.

  90. Trigo, M, Eckhause, T, Wahlstrand, J, Merlin, R, Reason, M, and Goldman, R (2007). Ultrafast optical generation and remote detection of terahertz sound using semiconductor superlattices,  APPLIED PHYSICS LETTERS, 91(2):023115.

  91. Lu, J, Johnson, H, Dasika, V, and Goldman, R (2006). Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements,  APPLIED PHYSICS LETTERS, 88(5):053109.

  92. Trigo, M, Eckhause, T, Reason, M, Goldman, R, and Merlin, R (2006). Observation of surface-avoiding waves: A new class of extended states in periodic media,  PHYSICAL REVIEW LETTERS, 97(12):124301.

  93. Gleason, J, Hjelmstad, M, Dasika, V, Goldman, R, Fathpour, S, Charkrabarti, S, and Bhattacharya, P (2005).Nanometer-scale studies of point defect distributions in GaMnAs alloys,  APPLIED PHYSICS LETTERS, 86(1):011911.

  94. Lee, S, Cavalieri, A, Fritz, D, Swan, M, Hegde, R, Reason, M, Goldman, R, and Reis, D (2005). Generation and propagation of a picosecond acoustic pulse at a buried interface: Time-resolved X-ray diffraction measurements,  PHYSICAL REVIEW LETTERS, 95(24):246104.

  95. Reason, M, Weng, X, Ye, W, Dettling, D, Hanson, S, Obeidi, G, and Goldman, R (2005). Stress evolution in GaAsN alloy films,  JOURNAL OF APPLIED PHYSICS, 97(10):103523.

  96. Trigo, M, Eckhause, T, Wahlstrand, J, Merlin, R, Reason, M, and Goldman, R (2005). Generation and remote detection of coherent folded acoustic phonons,  Physics of Semiconductors, Pts A and B, 772:1190–1191.

  97. Weng, X, Rudawski, N, Wang, P, Goldman, R, Partin, D, and Heremans, J (2005). Effects of buffer layers on the structural and electronic properties of InSb films,  JOURNAL OF APPLIED PHYSICS, 97(4):043713.

  98. Weng, X, Ye, W, Clarke, S, Goldman, R, Rotberg, V, Daniel, A, and Clarke, R (2005). Matrix-seeded growth of nitride semiconductor nanostructures using ion beams,  JOURNAL OF APPLIED PHYSICS, 97(6):064301.

  99. Ye, W, Hanson, S, Reason, M, Weng, X, and Goldman, R (2005). Control of InAs/GaAs quantum dot density and alignment using modified buffer layers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 23(4):1736–1740.

  100. Goldman, R (2004). Nanoprobing of semiconductor heterointerfaces: quantum dots, alloys and diffusion, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 37(13):R163–R178.

  101. Reason, M, McKay, H, Ye, W, Hanson, S, Goldman, R, and Rotberg, V (2004). Mechanisms of nitrogen incorporation in GaAsN alloys,  APPLIED PHYSICS LETTERS, 85(10):1692–1694.

  102. Shin, B, Chen, W, Goldman, R, Song, J, Kim, J, and Lee, Y (2004). Initiation and evolution of phase separation in GaP/InP short-period superlattices,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1):216–219.

  103. Weng, X, Goldman, R, Rotberg, V, Bataiev, N, and Brillson, L (2004). Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs,  APPLIED PHYSICS LETTERS, 85(14):2774–2776.

  104. Weng, X, Ye, W, Goldman, R, and Mabon, J (2004). Formation and blistering of GaAsN nanostructure layers, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(3):989–992.

  105. Chen, W, Shin, B, Goldman, R, Stiff, A, and Bhattacharya, P (2003). Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 21(4):1920–1923.

  106. Goldman, R, Shin, B, and Lita, B (2003). Mechanisms of semiconductor nanostructure formation,  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 195(1):151–158.

  107. Shin, B, Lin, A, Lappo, K, Goldman, R, Hanna, M, Francoeur, S, Norman, A, and Mascarenhas, A (2002). Initiation and evolution of phase separation in heteroepitaxial InAlAs films,  APPLIED PHYSICS LETTERS, 80(18):3292–3294.

  108. Shin, B, Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (2002). Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 81(8):1423–1425.

  109. Weng, X, Clarke, S, Ye, W, Kumar, S, Goldman, R, Daniel, A, Clarke, R, Holt, J, Sipowska, J, Francis, A, and Rotberg, V (2002). Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures,  JOURNAL OF APPLIED PHYSICS, 92(7):4012–4018.

  110. Krishna, S, Sabarinathan, J, Linder, K, Bhattacharya, P, Lita, B, and Goldman, R (2000). Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18(3):1502–1506.

  111. Lita, B, Beck, M, Goldman, R, Seryogin, G, Nikishin, S, and Temkin, H (2000). Structural and compositional variations in ZnSnP2/GaAs superlattices,  APPLIED PHYSICS LETTERS, 77(18):2894–2896.

  112. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (2000). Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices,  SURFACE REVIEW AND LETTERS, 7(5-6):539–545.

  113. Weng, X, Goldman, R, Partin, D, and Heremans, J (2000). Evolution of structural and electronic properties of highly mismatched InSb films,  JOURNAL OF APPLIED PHYSICS, 88(11):6276–6286.

  114. Goldman, R (1999). Papers from the 17th North American Conference on molecular beam epitaxy - Preface,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17(3):1115.

  115. Lita, B, Ghaisas, S, Goldman, R, and Melloch, M (1999). Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices,  APPLIED PHYSICS LETTERS, 75(26):4082–4084.

  116. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (1999). Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 75(18):2797–2799.

  117. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (1999). Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 74(19):2824–2826.

  118. Chen, H, Feenstra, R, Goldman, R, Silfvenius, C, and Landgren, G (1998). Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy,  APPLIED PHYSICS LETTERS, 72(14):1727–1729.

  119. Chen, N, Yang, R, and Goldman, R (1998). Kinetics of carbon-NO reaction studied by scanning tunneling microscopy on the basal plane of graphite,  JOURNAL OF CATALYSIS, 180(2):245–257.

  120. Goldman, R, Kavanagh, K, Wieder, H, Ehrlich, S, and Feenstra, R (1998). Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers,  JOURNAL OF APPLIED PHYSICS, 83(10):5137–5149.

  121. Schuermeyer, F, Cheskis, D, Goldman, R, and Wieder, H (1998). Photoconduction studies on InGaAs HEMTs, COMPOUND SEMICONDUCTORS 1997, 156:303–306.

  122. Goldman, R, Feenstra, R, Briner, B, OSteen, M, and Hauenstein, R (1997). Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs,  JOURNAL OF ELECTRONIC MATERIALS, 26(11):1342–1348.

  123. Goldman, R, Feenstra, R, Silfvenius, C, Stalnacke, B, and Landgren, G (1997). Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 15(4):1027–1033.

  124. Kavanagh, K, Goldman, R, Lavoie, C, Leduc, B, Pinnington, T, Tiedje, T, Klug, D, and Tse, J (1997). In situ detection of misfit dislocations by light scattering,  JOURNAL OF CRYSTAL GROWTH, 174(1-4):550–557.

  125. Goldman, R, Feenstra, R, Briner, B, OSteen, M, and Hauenstein, R (1996). Atomic-scale structure and electronic properties of GaN/GaAs superlattices,  APPLIED PHYSICS LETTERS, 69(24):3698–3700.

  126. Goldman, R, Kavanagh, K, and Wieder, H (1996). Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1-xAs buffers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 14(4):3035–3039.

  127. Goldman, R, Kavanagh, K, Wieder, H, Robbins, V, Ehrlich, S, and Feenstra, R (1996). Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases,  JOURNAL OF APPLIED PHYSICS, 80(12):6849–6854.

  128. Margulies, D, Parker, F, Spada, F, Goldman, R, Li, J, Sinclair, R, and Berkowitz, A (1996). Anomalous moment and anisotropy behavior in Fe3O4 films,  PHYSICAL REVIEW B, 53(14):9175–9187.

  129. GOLDMAN, R, CHEN, J, KAVANAGH, K, WIEDER, H, ROBBINS, V, and MILLER, J (1995). STRUCTURAL AND MAGNETOTRANSPORT PROPERTIES OF INGAAS/INALAS HETEROSTRUCTURES GROWN ON LINEARLY-GRADED AL(INGA)AS BUFFERS ON GAAS,  COMPOUND SEMICONDUCTORS 1994(141):313–318.

  130. GOLDMAN, R, WIEDER, H, and KAVANAGH, K (1995). CORRELATION OF ANISOTROPIC STRAIN RELAXATION WITH SUBSTRATE MISORIENTATION DIRECTION AT INGAAS/GAAS(001) INTERFACES,  APPLIED PHYSICS LETTERS, 67(3):344–346.

  131. Goldman, R, Wieder, H, and Kavanagh, K (1995). Effects of substrate misorientation direction on strain relaxation at InGaAs/GaAs(001) interfaces,  STRAINED LAYER EPITAXY-MATERIALS, PROCESSING, AND DEVICE APPLICATIONS, 379:21–26.

  132. Lavoie, C, Pinnington, T, Nodwell, E, Tiedje, T, Goldman, R, Kavanagh, K, and Hutter, J (1995). Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers,  APPLIED PHYSICS LETTERS, 67(25):3744–3746.

  133. RAMMOHAN, K, RICH, D, GOLDMAN, R, CHEN, J, WIEDER, H, and KAVANAGH, K (1995). STUDY OF MU-M-SCALE SPATIAL VARIATIONS IN STRAIN OF A COMPOSITIONALLY STEP-GRADED INXGA1-XAS/GAAS(001) HETEROSTRUCTURE,  APPLIED PHYSICS LETTERS, 66(7):869–871.

  134. RAMMOHAN, K, TANG, Y, RICH, D, GOLDMAN, R, WIEDER, H, and KAVANAGH, K (1995). RELAXATION-INDUCED POLARIZED LUMINESCENCE FROM INXGA1-XAS FILMS GROWN ON GAAS(001),  PHYSICAL REVIEW B, 51(8):5033–5037.

  135. RICH, D, RAMMOHAN, K, TANG, Y, LIN, H, GOLDMAN, R, WIEDER, H, and KAVANAGH, K (1995). INFLUENCE OF GAAS(001) SUBSTRATE MISORIENTATION TOWARDS (111) ON THE OPTICAL-PROPERTIES OF INXGA1-XAS/GAAS,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 13(4):1766–1772.

  136. Ring, K, Shapiro, A, Deng, F, Goldman, R, Spada, F, Hellman, F, Cheeks, T, and Kavanagh, K (1995). Structural and magnetic characterization of Bi-substituted garnet on Si and GaAs,  MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES, 384:41–46.

  137. WIEDER, H, GOLDMAN, R, CHEN, J, and YOUNG, A (1995). GATE-CONTROLLED MODULATION OF CHARGE-TRANSPORT IN LONG-CHANNEL, DELTA-DOPED, HETEROJUNCTION HALL-BAR STRUCTURES,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 13(4):1853–1858.

  138. GOLDMAN, R, CHANG, J, and KAVANAGH, K (1994). CONTROL OF SURFACE-MORPHOLOGY AND STRAIN RELAXATION OF INGAAS GROWN ON GAAS USING A STEP-GRADED BUFFER,  EPITAXIAL GROWTH PROCESSES, 2140:179–188.

  139. GOLDMAN, R, RAMMOHAN, K, RAISANEN, A, GOORSKY, M, BRILLSON, L, RICH, D, WIEDER, H, and KAVANAGH, K (1994). ANISOTROPIC STRUCTURAL AND ELECTRONIC-PROPERTIES OF INGAAS/GAAS HETEROJUNCTIONS, COMPOUND SEMICONDUCTOR EPITAXY, 340:349–354.

  140. GOLDMAN, R, WIEDER, H, KAVANAGH, K, RAMMOHAN, K, and RICH, D (1994). ANISOTROPIC STRUCTURAL, ELECTRONIC, AND OPTICAL-PROPERTIES OF INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES,  APPLIED PHYSICS LETTERS, 65(11):1424–1426.

  141. GRIMSDITCH, M, KUMAR, S, and GOLDMAN, R (1994). A BRILLOUIN-SCATTERING INVESTIGATION OF NIO, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 129(2-3):327–333.

  142. KAVANAGH, K, GOLDMAN, R, and CHANG, J (1994). STRAIN RELAXATION IN COMPOSITIONALLY GRADED INGAAS/GAAS HETEROSTRUCTURES,  SCANNING MICROSCOPY, 8(4):905–912.

  143. RAISANEN, A, BRILLSON, L, GOLDMAN, R, KAVANAGH, K, and WIEDER, H (1994). DISLOCATION-INDUCED DEEP-LEVEL STATES IN IN0.08GA0.92AS/GAAS HETEROSTRUCTURES,  JOURNAL OF ELECTRONIC MATERIALS, 23(9):929–933.

  144. RAISANEN, A, BRILLSON, L, GOLDMAN, R, KAVANAGH, K, and WIEDER, H (1994). OPTICAL-DETECTION OF MISFIT DISLOCATION-INDUCED DEEP LEVELS AT INGAAS/GAAS HETEROJUNCTIONS,  APPLIED PHYSICS LETTERS, 64(26):3572–3574.

  145. RAISANEN, A, BRILLSON, L, GOLDMAN, R, KAVANAGH, K, and WIEDER, H (1994). STRAIN RELAXATION INDUCED DEEP LEVELS IN IN1-XGAXAS THIN-FILMS,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 12(4):1050–1053.

  146. GRIER, D, ALLEN, K, GOLDMAN, R, SANDER, L, and CLARKE, R (1990). SUPERLATTICES AND LONG-RANGE ORDER IN ELECTRODEPOSITED DENDRITES,  PHYSICAL REVIEW LETTERS, 64(18):2152–2155.