Rachel S. Goldman

Professor

rsgold@umich.edu

2094 H.H. Dow Building

T: (734) 647-6821

Bio

Projects

Publications

Research Facilities

Group


Publications

  1. Chang, AS, Walrath, JC, Frost, T, Greenhill, C, Occena, J, Hazari, A, Bhattacharya, P, and Goldman, RS (2019). Formation and properties of InGaN QDs: Influence of substratesAPPLIED PHYSICS LETTERS, 114(6).

  2. Motlag, M, Kumar, P, Hu, KY, Jin, S, Li, J, Shao, J, Yi, X, Lin, Y, Walrath, C., J, Tong, L, Huang, X, Goldman, RS, Ye, Lei, and Cheng, GJ (2019). Asymmetric 3D Elastic-Plastic Strain-Modulated Electron Energy Structure in Monolayer Graphene by Laser ShockingADVANCED MATERIALS, 31(19).

  3. Occena, J, Jen, T, Mitchell, JW, Linhart, WM, Pavelescu, E, Kudrawiec, R, Wang, YQ, and Goldman, RS (2019). Mapping the composition-dependence of the energy bandgap of GaAsNBi alloysAPPLIED PHYSICS LETTERS, 115(8).

  4. Del Gaudio, D, Aagesen, LK, Huang, S, Johnson, TM, Faeth, BD, Lu, H, Ziff, RM, and Goldman, RS (2018). Influence of surface nano-patterning on the placement of InAs quantum dotsJOURNAL OF APPLIED PHYSICS, 124(11).

  5. Iafrate, JR, Huang, S, Del Gaudio, D, Goldman, S., R, and Sih, V (2018). Effect of modified periodic waveforms on current-induced spin polarization measurementsAIP ADVANCES, 8(6).

  6. Occena, J, Jen, T, Lu, H, Carter, BA, Jimson, TS, Norman, AG, and Goldman, RS (2018). Surfactant-induced chemical ordering of GaAsN: BiAPPLIED PHYSICS LETTERS, 113(21).

  7. Finkenstaedt-Quinn, SA, Halim, AS, Chambers, G., T, Moon, A, Goldman, RS, Gere, AR, and Shultz, GV (2017). Investigation of the Influence of a Writing-to-Learn Assignment on Student Understanding of Polymer PropertiesJOURNAL OF CHEMICAL EDUCATION, 94(11, SI):1610–1617.

  8. Kang, M, Jeon, S, Jen, T, Lee, J, Sih, V, and Goldman, R (2017). Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescenceJOURNAL OF APPLIED PHYSICS, 122(3):033102.

  9. Occena, J, Jen, T, Rizzi, E, Johnson, T, Horwath, J, Wang, Y, and Goldman, R (2017). Bi-enhanced N incorporation in GaAsNBi alloysAPPLIED PHYSICS LETTERS, 110(24):242102.

  10. Field, R, Occena, J, Jen, T, Del Gaudio, D, Yarlagadda, B, Kurdak, C, and Goldman, R (2016). Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloysAPPLIED PHYSICS LETTERS, 109(25):252105.

  11. Liu, W, Chi, H, Walrath, J, Chang, A, Stoica, V, Endicott, L, Tang, X, Goldman, R, and Uher, C (2016). Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin filmsAPPLIED PHYSICS LETTERS, 108(4):043902.

  12. Mintairov, A, He, Y, Merz, J, Jin, Y, Goldman, R, Kudrawiec, R, Misiewicz, J, Akimov, I, Yakovlev, D, and Bayer, M (2016). Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloysSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(9):095012.

  13. Canniff, J, Jeon, S, Huang, S, and Goldman, R (2015). Formation and coarsening of near-surface Ga nanoparticles on SiNxAPPLIED PHYSICS LETTERS, 106(24):243102.

  14. Jen, T, Vardar, G, Wang, Y, and Goldman, R (2015). Identifying the dominant interstitial complex in dilute GaAsN alloysAPPLIED PHYSICS LETTERS, 107(22):221904.

  15. Luengo-Kovac, M, Macmahon, M, Huang, S, Goldman, R, and Sih, V (2015). g-factor modification in a bulk InGaAs epilayer by an in-plane electric fieldPHYSICAL REVIEW B, 91(20):201110.

  16. Walrath, J, Lin, Y, Huang, S, and Goldman, R (2015). Profiling the local carrier concentration across a semiconductor quantum dotAPPLIED PHYSICS LETTERS, 106(19):192101.

  17. Warren, M, Canniff, J, Chi, H, Naab, F, Stoica, V, Clarke, R, Uher, C, and Goldman, R (2015). Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAsJOURNAL OF APPLIED PHYSICS, 117(6):065101.

  18. Abere, M, Chen, C, Rittman, D, Kang, M, Goldman, R, Phillips, J, Torralva, B, and Yalisove, S (2014). Nanodot formation induced by femtosecond laser irradiationAPPLIED PHYSICS LETTERS, 105(16):163103.

  19. Chang, A, Zech, E, Kim, T, Lin, Y, Mawst, L, and Goldman, R (2014). Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignmentAPPLIED PHYSICS LETTERS, 105(14):142105.

  20. Fahrenkrug, E, Gu, J, Jeon, S, Veneman, P, Goldman, R, and Maldonado, S (2014). Room-Temperature Epitaxial Electrodeposition of Single-Crystalline Germanium Nanowires at the Wafer Scale from an Aqueous SolutionNANO LETTERS, 14(2):847–852.

  21. Huang, S, Kim, S, Pan, X, and Goldman, R (2014). Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dotsAPPLIED PHYSICS LETTERS, 105(3):032107.

  22. Kang, M, Beskin, I, Al-Heji, A, Shende, O, Huang, S, Jeon, S, and Goldman, R (2014). Evolution of ion-induced nanoparticle arrays on GaAs surfacesAPPLIED PHYSICS LETTERS, 104(18):182102.

  23. Kang, M, Wu, J, Ye, W, Jiang, Y, Robb, E, Chen, C, and Goldman, R (2014). Formation and evolution of ripples on ion-irradiated semiconductor surfacesAPPLIED PHYSICS LETTERS, 104(5):052103.

  24. Kudrawiec, R, Sitarek, P, Gladysiewicz, M, Misiewicz, J, He, Y, Jin, Y, Vardar, G, Mintarov, A, Merz, J, Goldman, R, Yu, K, and Walukiewicz, W (2014). Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layersTHIN SOLID FILMS, 567:101–104.

  25. Li, Y, Stoica, V, Sun, K, Liu, W, Endicott, L, Walrath, J, Chang, A, Lin, Y, Pipe, K, Goldman, R, Uher, C, and Clarke, R (2014). Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasersAPPLIED PHYSICS LETTERS, 105(20):201904.

  26. Canniff, J, Wood, A, and Goldman, R (2013). Formation mechanisms of embedded nanocrystals in SiNxAPPLIED PHYSICS LETTERS, 102(24):243111.

  27. Feldberg, N, Aldous, J, Linhart, W, Phillips, L, Durose, K, Stampe, P, Kennedy, R, Scanlon, D, Vardar, G, Field, R, Jen, T, Goldman, R, Veal, T, and Durbin, S (2013). Growth, disorder, and physical properties of ZnSnN2APPLIED PHYSICS LETTERS, 103(4):042109.

  28. Field, R, Jin, Y, Cheng, H, Dannecker, T, Jock, R, Wang, Y, Kurdak, C, and Goldman, R (2013). Influence of N incorporation on persistent photoconductivity in GaAsN alloysPHYSICAL REVIEW B, 87(15):155303.

  29. Huang, S, Kim, S, Levy, R, Pan, X, and Goldman, R (2013). Mechanisms of InAs/GaAs quantum dot formation during annealing of In islandsAPPLIED PHYSICS LETTERS, 103(13):132104.

  30. Kang, M, Al-Heji, A, Lee, J, Saucer, T, Jeon, S, Wu, J, Zhao, L, Katzenstein, A, Sofferman, D, Sih, V, and Goldman, R (2013). Ga nanoparticle-enhanced photoluminescence of GaAsAPPLIED PHYSICS LETTERS, 103(10):101903.

  31. Kang, M, Wu, J, Sofferman, D, Beskin, I, Chen, H, Thornton, K, and Goldman, R (2013). Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfacesAPPLIED PHYSICS LETTERS, 103(7):072115.

  32. Pursley, B, Luengo-Kovac, M, Vardar, G, Goldman, R, and Sih, V (2013). Spin lifetime measurements in GaAsBi thin filmsAPPLIED PHYSICS LETTERS, 102(2):022420.

  33. Vardar, G, Paleg, S, Warren, M, Kang, M, Jeon, S, and Goldman, R (2013). Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBiAPPLIED PHYSICS LETTERS, 102(4):042106.

  34. Walrath, J, Lin, Y, Pipe, K, and Goldman, R (2013). Quantifying the local Seebeck coefficient with scanning thermoelectric microscopyAPPLIED PHYSICS LETTERS, 103(21):212101.

  35. Warren, M, Canniff, J, Chi, H, Morag, E, Naab, F, Stoica, V, Clarke, R, Uher, C, and Goldman, R (2013). Influence of embedded indium nanocrystals on GaAs thermoelectric propertiesJOURNAL OF APPLIED PHYSICS, 114(4):043704.

  36. Zech, E, Chang, A, Martin, A, Canniff, J, Lin, Y, Millunchick, J, and Goldman, R (2013). Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsetsAPPLIED PHYSICS LETTERS, 103(8):082107.

  37. Dasika, V and Goldman, R (2012). STM OF SELF ASSEMBLED III-V NANOSTRUCTURESHANDBOOK OF INSTRUMENTATION AND TECHNIQUES FOR SEMICONDUCTOR NANOSTRUCTURE CHARACTERIZATION, VOLS 1 AND 2, 1-2:369–406.

  38. Kang, M, Saucer, T, Warren, M, Wu, J, Sun, H, Sih, V, and Goldman, R (2012). Surface plasmon resonances of Ga nanoparticle arraysAPPLIED PHYSICS LETTERS, 101(8):081905.

  39. Kang, M, Wu, J, Huang, S, Warren, M, Jiang, Y, Robb, E, and Goldman, R (2012). Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfacesAPPLIED PHYSICS LETTERS, 101(8):082101.

  40. Warren, M, Wood, A, Canniff, J, Naab, F, Uher, C, and Goldman, R (2012). Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAsAPPLIED PHYSICS LETTERS, 100(10):102101.

  41. Wood, A, Collino, R, Wang, P, Wang, Y, and Goldman, R (2012). Formation and transformation of embedded GaN nanocrystalsAPPLIED PHYSICS LETTERS, 100(20):203113.

  42. Wu, J and Goldman, R (2012). Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redepositionAPPLIED PHYSICS LETTERS, 100(5):053103.

  43. Collino, R, Wood, A, Estrada, N, Dick, B, Ro, H, Soles, C, Wang, Y, Thouless, M, and Goldman, R (2011). Formation and transfer of GaAsN nanostructure layersJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(6):060601.

  44. Dasika, V, Semichaevsky, A, Petropoulos, J, Dibbern, J, Dangelewicz, A, Holub, M, Bhattacharya, P, Zide, J, Johnson, H, and Goldman, R (2011). Influence of Mn dopants on InAs/GaAs quantum dot electronic statesAPPLIED PHYSICS LETTERS, 98(14):141907.

  45. Huang, S, Semichaevsky, A, Webster, L, Johnson, H, and Goldman, R (2011). Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlatticesJOURNAL OF APPLIED PHYSICS, 110(7):073105.

  46. Kumah, D, Wu, J, Husseini, N, Dasika, V, Goldman, R, Yacoby, Y, and Clarke, R (2011). Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAsAPPLIED PHYSICS LETTERS, 98(2):021903.

  47. Semichaevsky, A, Goldman, R, and Johnson, H (2011). Linking Computational and Experimental Studies of III-V Quantum Dots for Optoelectronics and PhotovoltaicsJOM, 63(9):20–26.

  48. Wood, A, Collino, R, Cardozo, B, Naab, F, Wang, Y, and Goldman, R (2011). Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystalsJOURNAL OF APPLIED PHYSICS, 110(12):124307.

  49. Wood, A, Weng, X, Wang, Y, and Goldman, R (2011). Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystalsAPPLIED PHYSICS LETTERS, 99(9):093108.

  50. Dannecker, T, Jin, Y, Cheng, H, Gorman, C, Buckeridge, J, Uher, C, Fahy, S, Kurdak, C, and Goldman, R (2010). Nitrogen composition dependence of electron effective mass in GaAs1-xNxPHYSICAL REVIEW B, 82(12):125203.

  51. Collino, R, Dick, B, Naab, F, Wang, Y, Thouless, M, and Goldman, R (2009). Blister formation in ion-implanted GaAs: Role of diffusivityAPPLIED PHYSICS LETTERS, 95(11):111912.

  52. Dasika, V, Goldman, R, Song, J, Choi, W, Cho, N, and Lee, J (2009). Nanometer-scale measurements of electronic states in InAs/GaAs quantum dotsJOURNAL OF APPLIED PHYSICS, 106(1):014315.

  53. Dasika, V, Song, J, Choi, W, Cho, N, Lee, J, and Goldman, R (2009). Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formationAPPLIED PHYSICS LETTERS, 95(16):163114.

  54. Jin, Y, He, Y, Cheng, H, Jock, R, Dannecker, T, Reason, M, Mintairov, A, Kurdak, C, Merz, J, and Goldman, R (2009). Influence of Si-N complexes on the electronic properties of GaAsN alloysAPPLIED PHYSICS LETTERS, 95(9):092109.

  55. Jin, Y, Jock, R, Cheng, H, He, Y, Mintarov, A, Wang, Y, Kurdak, C, Merz, J, and Goldman, R (2009). Influence of N interstitials on the electronic properties of GaAsN alloysAPPLIED PHYSICS LETTERS, 95(6):062109.

  56. Wu, J, Ye, W, Cardozo, B, Saltzman, D, Sun, K, Sun, H, Mansfield, J, and Goldman, R (2009). Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfacesAPPLIED PHYSICS LETTERS, 95(15):153107.

  57. Yadav, A, Pipe, K, Ye, W, and Goldman, R (2009). Thermoelectric properties of quantum dot chainsJOURNAL OF APPLIED PHYSICS, 105(9):093711.

  58. Reason, M, Jin, Y, Mckay, H, Mangan, N, Mao, D, Goldman, R, Bai, X, and Kurdak, C (2008). Influence of N on the electronic properties of GaAsN alloy films and heterostructures (vol 102, art no 103710, 2007)JOURNAL OF APPLIED PHYSICS, 103(1):019902.

  59. Sheu, Y, Lee, S, Wahlstrand, J, Walko, D, Landahl, E, Arms, D, Reason, M, Goldman, R, and Reis, D (2008). Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffractionPHYSICAL REVIEW B, 78(4):045317.

  60. Trigo, M, Sheu, Y, Arms, D, Chen, J, Ghimire, S, Goldman, R, Landahl, E, Merlin, R, Peterson, E, Reason, M, and Reis, D (2008). Probing unfolded acoustic phonons with X raysPHYSICAL REVIEW LETTERS, 101(2):025505.

  61. Reason, M, Jin, Y, Mckay, H, Mangan, N, Mao, D, Goldman, R, Bai, X, and Kurdak, C (2007). Influence of N on the electronic properties of GaAsN alloy films and heterostructuresJOURNAL OF APPLIED PHYSICS, 102(10):103710.

  62. Reason, M, Rudawski, N, McKay, H, Weng, X, Ye, W, and Goldman, R (2007). Mechanisms of GaAsN growth: Surface and step-edge diffusionJOURNAL OF APPLIED PHYSICS, 101(8):083520.

  63. Tabbal, M, Kim, T, Warrender, J, Aziz, M, Cardozo, B, and Goldman, R (2007). Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser meltingJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 25(6):1847–1852.

  64. Trigo, M, Eckhause, T, Wahlstrand, J, Merlin, R, Reason, M, and Goldman, R (2007). Ultrafast optical generation and remote detection of terahertz sound using semiconductor superlatticesAPPLIED PHYSICS LETTERS, 91(2):023115.

  65. Lu, J, Johnson, H, Dasika, V, and Goldman, R (2006). Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurementsAPPLIED PHYSICS LETTERS, 88(5):053109.

  66. Trigo, M, Eckhause, T, Reason, M, Goldman, R, and Merlin, R (2006). Observation of surface-avoiding waves: A new class of extended states in periodic mediaPHYSICAL REVIEW LETTERS, 97(12):124301.

  67. Gleason, J, Hjelmstad, M, Dasika, V, Goldman, R, Fathpour, S, Charkrabarti, S, and Bhattacharya, P (2005). Nanometer-scale studies of point defect distributions in GaMnAs alloysAPPLIED PHYSICS LETTERS, 86(1):011911.

  68. Lee, S, Cavalieri, A, Fritz, D, Swan, M, Hegde, R, Reason, M, Goldman, R, and Reis, D (2005). Generation and propagation of a picosecond acoustic pulse at a buried interface: Time-resolved X-ray diffraction measurementsPHYSICAL REVIEW LETTERS, 95(24):246104.

  69. Reason, M, Weng, X, Ye, W, Dettling, D, Hanson, S, Obeidi, G, and Goldman, R (2005). Stress evolution in GaAsN alloy filmsJOURNAL OF APPLIED PHYSICS, 97(10):103523.

  70. Trigo, M, Eckhause, T, Wahlstrand, J, Merlin, R, Reason, M, and Goldman, R (2005). Generation and remote detection of coherent folded acoustic phononsPhysics of Semiconductors, Pts A and B, 772:1190–1191.

  71. Weng, X, Rudawski, N, Wang, P, Goldman, R, Partin, D, and Heremans, J (2005). Effects of buffer layers on the structural and electronic properties of InSb filmsJOURNAL OF APPLIED PHYSICS, 97(4):043713.

  72. Weng, X, Ye, W, Clarke, S, Goldman, R, Rotberg, V, Daniel, A, and Clarke, R (2005). Matrix-seeded growth of nitride semiconductor nanostructures using ion beamsJOURNAL OF APPLIED PHYSICS, 97(6):064301.

  73. Ye, W, Hanson, S, Reason, M, Weng, X, and Goldman, R (2005). Control of InAs/GaAs quantum dot density and alignment using modified buffer layersJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 23(4):1736–1740.

  74. Goldman, R (2004). Nanoprobing of semiconductor heterointerfaces: quantum dots, alloys and diffusionJOURNAL OF PHYSICS D-APPLIED PHYSICS, 37(13):R163–R178.

  75. Reason, M, McKay, H, Ye, W, Hanson, S, Goldman, R, and Rotberg, V (2004). Mechanisms of nitrogen incorporation in GaAsN alloysAPPLIED PHYSICS LETTERS, 85(10):1692–1694.

  76. Shin, B, Chen, W, Goldman, R, Song, J, Kim, J, and Lee, Y (2004). Initiation and evolution of phase separation in GaP/InP short-period superlatticesJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1):216–219.

  77. Weng, X, Goldman, R, Rotberg, V, Bataiev, N, and Brillson, L (2004). Origins of luminescence from nitrogen-ion-implanted epitaxial GaAsAPPLIED PHYSICS LETTERS, 85(14):2774–2776.

  78. Weng, X, Ye, W, Goldman, R, and Mabon, J (2004). Formation and blistering of GaAsN nanostructure layersJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(3):989–992.

  79. Chen, W, Shin, B, Goldman, R, Stiff, A, and Bhattacharya, P (2003). Mechanisms of lateral ordering of InAs/GaAs quantum dot superlatticesJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 21(4):1920–1923.

  80. Goldman, R, Shin, B, and Lita, B (2003). Mechanisms of semiconductor nanostructure formationPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 195(1):151–158.

  81. Shin, B, Lin, A, Lappo, K, Goldman, R, Hanna, M, Francoeur, S, Norman, A, and Mascarenhas, A (2002). Initiation and evolution of phase separation in heteroepitaxial InAlAs filmsAPPLIED PHYSICS LETTERS, 80(18):3292–3294.

  82. Shin, B, Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (2002). Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dotsAPPLIED PHYSICS LETTERS, 81(8):1423–1425.

  83. Weng, X, Clarke, S, Ye, W, Kumar, S, Goldman, R, Daniel, A, Clarke, R, Holt, J, Sipowska, J, Francis, A, and Rotberg, V (2002). Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructuresJOURNAL OF APPLIED PHYSICS, 92(7):4012–4018.

  84. Krishna, S, Sabarinathan, J, Linder, K, Bhattacharya, P, Lita, B, and Goldman, R (2000). Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dotsJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18(3):1502–1506.

  85. Lita, B, Beck, M, Goldman, R, Seryogin, G, Nikishin, S, and Temkin, H (2000). Structural and compositional variations in ZnSnP2/GaAs superlatticesAPPLIED PHYSICS LETTERS, 77(18):2894–2896.

  86. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (2000). Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlatticesSURFACE REVIEW AND LETTERS, 7(5-6):539–545.

  87. Weng, X, Goldman, R, Partin, D, and Heremans, J (2000). Evolution of structural and electronic properties of highly mismatched InSb filmsJOURNAL OF APPLIED PHYSICS, 88(11):6276–6286.

  88. Goldman, R (1999). Papers from the 17th North American Conference on molecular beam epitaxy - PrefaceJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17(3):1115.

  89. Lita, B, Ghaisas, S, Goldman, R, and Melloch, M (1999). Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlatticesAPPLIED PHYSICS LETTERS, 75(26):4082–4084.

  90. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (1999). Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dotsAPPLIED PHYSICS LETTERS, 75(18):2797–2799.

  91. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (1999). Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dotsAPPLIED PHYSICS LETTERS, 74(19):2824–2826.

  92. Chen, H, Feenstra, R, Goldman, R, Silfvenius, C, and Landgren, G (1998). Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopyAPPLIED PHYSICS LETTERS, 72(14):1727–1729.

  93. Chen, N, Yang, R, and Goldman, R (1998). Kinetics of carbon-NO reaction studied by scanning tunneling microscopy on the basal plane of graphiteJOURNAL OF CATALYSIS, 180(2):245–257.

  94. Goldman, R, Kavanagh, K, Wieder, H, Ehrlich, S, and Feenstra, R (1998). Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayersJOURNAL OF APPLIED PHYSICS, 83(10):5137–5149.

  95. Schuermeyer, F, Cheskis, D, Goldman, R, and Wieder, H (1998). Photoconduction studies on InGaAs HEMTsCOMPOUND SEMICONDUCTORS 1997, 156:303–306.

  96. Goldman, R, Feenstra, R, Briner, B, OSteen, M, and Hauenstein, R (1997). Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAsJOURNAL OF ELECTRONIC MATERIALS, 26(11):1342–1348.

  97. Goldman, R, Feenstra, R, Silfvenius, C, Stalnacke, B, and Landgren, G (1997). Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlatticesJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 15(4):1027–1033.

  98. Kavanagh, K, Goldman, R, Lavoie, C, Leduc, B, Pinnington, T, Tiedje, T, Klug, D, and Tse, J (1997). In situ detection of misfit dislocations by light scatteringJOURNAL OF CRYSTAL GROWTH, 174(1-4):550–557.

  99. Goldman, R, Feenstra, R, Briner, B, OSteen, M, and Hauenstein, R (1996). Atomic-scale structure and electronic properties of GaN/GaAs superlatticesAPPLIED PHYSICS LETTERS, 69(24):3698–3700.

  100. Goldman, R, Kavanagh, K, and Wieder, H (1996). Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1-xAs buffersJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 14(4):3035–3039.